 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistor 2SA1127 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC2634 5.00.2 Unit: mm 4.00.2 q q Low noise characteristics. High foward current transfer ratio hFE. s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25C) Ratings -60 -55 -7 -200 -100 400 150 -55 ~ +150 Unit V V V mA mA mW C C 13.50.5 5.10.2 s Features 0.45 -0.1 1.27 +0.2 0.45 -0.1 1.27 +0.2 123 2.30.2 2.540.15 1:Emitter 2:Collector 3:Base JEDEC:TO-92 EIAJ:SC-43A s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE * Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -30mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT min typ -1 - 0.01 max -100 -1 Unit nA A V V V -60 -55 -7 180 700 - 0.6 -1 200 150 VCE(sat) VBE fT NV V V MHz mV *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 1 Transistor PC -- Ta 500 -80 Ta=25C -70 -100 25C Ta=75C -80 2SA1127 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation PC (mW) 450 Collector current IC (mA) -60 -50 -40 -30 -20 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -180A -160A -140A -120A -100A -80A -60A -40A Collector current IC (mA) 400 IB=-200A -25C -60 -40 -20 -10 0 0 -2 -4 -6 -8 -10 -12 -20A 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 IC/IB=10 600 hFE -- IC 240 VCE=-5V fT -- IE VCB=-5V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C Transition frequency fT (MHz) -10 -30 -100 200 160 300 -25C 120 - 0.3 - 0.1 - 0.03 - 0.01 - 0.1 - 0.3 25C Ta=75C -25C 200 80 100 40 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 0 -1 -3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 100 IE=0 f=1MHz Ta=25C NV -- IC VCE=-10V 90 GV=80dB Function=FLAT 80 70 60 50 40 30 20 10 0 - 0.01 5k 22k Rg=100k Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 -3 -10 -30 -100 Noise voltage NV (mV) - 0.03 - 0.1 - 0.3 -1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
Price & Availability of 2SA1127
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |